IT is just beginning to understand the impact NVRAM will have on infrastructure. Jim Handy breaks down another new potential entrent into the market, with research from Lancaster University. What they call “UltraRAM” uses triple-barrier Resonant Tunneling to nonvolatile memory that can be read or written with low-voltages. The key to low-voltages means that the memory would not suffer wear to the tunnel dielectric and subsequently not leak off the floating gate, which is what causes flash to eventually become unreadable.
The full piece goes into a lot more detail of the material science behind the approach, but if they can ever bring UltraRAM to market, it seems to answer a lot of the existing issues with current DRAM and NAND approaches.
Read more at: University of Lancaster Invents Yet Another Memory
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